Welcome Analog Power Conversion, LLC
APC provides end-users with very high power, very high frequency silicon carbide switches, and custom-designed integrated circuits to drive them with unmatched performance.
APC designs and manufactures leading-edge high-performance, high-frequency, high-power silicon and SiC power devices and integrated circuits.
In Bend, APC performs thorough and comprehensive design of power semiconductors, from the process flow to build the die to the thermal analysis of complex hybrids and to the application circuitry of the end user. APC labs are equipped with electrical characterization equipment from tens of KHz to hundreds of MHz.
Quality Driven
Through design, process control, and burn-in screening, APC ensures the highest quality in its products, for the most demanding industrial and military applications.
Customer Focused
APC emphasizes its relationship with customers and devotes time to the smallest detail and request of its clients. APC’s silicon carbide power switches and custom-designed integrated circuits satisfy the most stringent demands that any application could require.
Green Energy
APC products are perfectly suited for green energy applications like photovoltaic ( solar panels), microgrid, EV traction, on board charging, wind energy and so on.
Value Proposition
WBG: Getting More Power At High Frequencies Efficiently!
Mission Statement
To Be the Premiere Supplier of Semiconductor Solutions for Analog Power Conversion
Company Vision
- Fossil-to-Green Energy Transition Calls for Non-Combustion Power Conversion on Unprecedented Scales
- Only Wide Band-Gap (WBG) Solid-State Devices can Meet this Insatiable Need for Power in the Emerging Green World
- APC is on the Forefront of this Solid-State Power Revolution with SiC & Other WBG Technologies
Technical Team
- BSNE – National Tsing Hua U. (Taiwan); MSNE – U. of New Mexico; Ph.D. Engr. – Kansas State U.
- Microsemi, TriQuint, Motorola, Sandia National Lab
- Co-Founder of GCT (GaAs Foundry merged with WIN Semiconductor, Taiwan, in 2003)
- 30+ Years in RF Application Engineering with 15 Issued US Patents
W. Albert Gu, Ph.D.
CEO
- BSEE & MSEE – Polytechnic Institute of Bucharest, Romania
- Microchip/Microsemi/APT, IPRS-Baneasa (Bucharest), ICCE-Baneasa (Bucharest)
- Key Technologist behind APT/Microsemi’s MOSFET, IGBT, RF MOSFET and SiC MOSFET & SBD
- 40+ Years in Power Device Design and Fabrication with 13 Issued US Patents & Numerous Publications and Foreign Patents
Dumitru G. Sdrulla
CTO
- BSEE & MSEE – University of California at Berkeley, CA
- Microsemi, IXYS, Analog Devices, Maxim Integrated Products
- Co-Founder of Maxim Integrated Products, and Leading Expert in Analog & Mixed-Signal IC Design specializes in Driver IC Design for WBG Power Devices and Switch-Mode Full-Bridge Modules
- 40+ Years in Analog & Mixed-Signal IC Design with 31 Issued US Patents & Numerous Publications
Sam S. Ochi
SVP–Driver Chain
- BSEE –College of Engr, Supélec; MSEE –U. of Paris; Ph.D. Microelectronics – U. Paul Sabatier, Toulouse
- Microsemi/Microchip, GlobalFoundries, Freescale Semiconductor
- Leading Expert in Power Device Design & Fabrication, Specializes in 4H-SiC & TCAD Simulations
- 15+ Years in Power Electronics and ESD Protection with 14 Issued US Patents & Numerous Publications
